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| SIPMOS(R) Small-Signal Transistor q VDS - 60 V q ID - 0.18 A q RDS(on) 10 q P channel q Enhancement mode SP 0610L 2 3 1 Type Ordering Code Tape and Reel Information bulk Pin Configuration Marking 1 D 2 G 3 S Package SP 0610 L Q67000-S065 Maximum Ratings Parameter Drain-source voltage SP0610L TO-92 Symbol Values - 60 - 60 20 - 0.18 - 0.72 0.63 - 55 ... + 150 200 - E 55/150/56 Unit V VDS VDGR VGS ID ID puls Ptot Tj, Tstg RthJA RthJSR TA = 25 C TA = 25 C Drain-gate voltage, RGS = 20 k Gate-source voltage Continuous drain current, TA = 25 C Pulsed drain current, Max. power dissipation, A W C K/W Operating and storage temperature range Thermal resistance, chip-ambient (without heat sink) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 - - - SP 0610L Electrical Characteristics at Tj = 25 C, unless otherwise specified. Parameter Symbol min. Static Characteristics Drain-source breakdown voltage VGS = 0, ID = 0.25 mA Gate threshold voltage VGS = VDS, ID = 1 mA Zero gate voltage drain current VDS = - 60 V, VGS = 0 Tj = 25 C Gate-source leakage current VGS = - 20 V, VDS = 0 Drain-source on-resistance VGS = - 10 V, ID = - 0.5 A Dynamic Characteristics Forward transconductance VDS 2 x ID x RDS(on)max, ID = - 0.5 A Input capacitance VGS = 0, VDS = - 25 V, f = 1 MHz Output capacitance VGS = 0, VDS = - 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0, VDS = - 25 V, f = 1 MHz Turn-on time ton, (ton = td(on) + tr) VDD = - 30 V, VGS = -10 V, RGS = 50 , ID = - 0.27 A Turn-off time toff, (toff = td(off) + tf) VDD = - 30 V, VGS = -10 V, RGS = 50 , ID = - 0.27 A Values typ. max. Unit V(BR)DSS VGS(th) IDSS V - 60 - 1.0 - - 1.5 - - 2.0 A - - 0.1 -1 7 -1 nA - - 10 - 10 IGSS RDS(on) gfs 0.08 0.13 30 17 8 7 12 10 20 - S pF - 40 25 12 10 18 13 27 ns Ciss Coss - Crss - td(on) tr td(off) tf - - - - SP 0610L Electrical Characteristics (cont'd) at Tj = 25 C, unless otherwise specified. Parameter Symbol min. Reverse Diode Continuous reverse drain current TA = 25 C Pulsed reverse drain current TA = 25 C Diode forward on-voltage Values typ. max. Unit IS - - - - 0.85 A - 0.18 - 0.72 V - - 1.2 ISM - IF = - 0.18 A, VGS = 0 VSD Package Outline TO-92 Dimensions in mm SP 0610L Characteristics at Tj = 25 C, unless otherwise specified. Total power dissipation Ptot = f (TA) Safe operating area ID = f (VDS) parameter: D = 0.01, TC = 25 C Typ. output characteristics ID = f (VDS) parameter: tp = 80 s Typ. drain-source on-resistance RDS(on) = f (ID) parameter: VGS SP 0610L Typ. transfer characteristics ID = f (VGS) parameter: tp = 80 s, VDS 2 x ID x RDS(on)max. Typ. forward transconductance gfs = f (ID) parameter: VDS 2 x ID x RDS(on)max., tp = 80 s Drain-source on-resistance RDS(on) = f (Tj) parameter: ID = 0.5 A, VGS = 10 V, (spread) Typ. capacitances C = f (VDS) parameter: VGS = 0, f = 1 MHz SP 0610L Gate threshold voltage VGS(th) = f (Tj) parameter: VDS = VGS, ID = 1 mA, (spread) Forward characteristics of reverse diode IF = f (VSD) parameter: tp = 80 s, Tj, (spread) Drain current ID = f (TA) parameter: VGS 10 V Drain-source breakdown voltage V(BR) DSS = b x V(BR)DSS (25 C) |
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